Ali kad bi ti pročitao te threadove malo osim samo da baciš ok ona naslov vidio bi da Micron nije lošiji od Samsunga po pitanju OC-a nego je pristup malo drukčiji.
Evo jedan quote sa tih threadova koji se poziva na official EVGA post.
Citiraj:
Found an explanation on an EVGA thread which might shed some light on whats going on. The comment reads as follows:
The "Micron" problem is not the Micron Ram itself but, I believe, a bug in the micron version of the bios that increases the clock speed of the Ram from a low voltage state (below .800v) faster than the VRMs can be cranked up to provide enough voltage for the memory to support the high clock speed. An overclock from low voltage states will start giving checkerboard artifacts somewhere in the +400 to +500 range.
If the voltage is already set high when you increase the slider and hit the apply button. running Kboost or locking rge voltage in afterburner, the memory will clock to +600 or better with no artifacts, of course the exact levels will depend on the individual card.
The Samsung memory either copes with the few milliseconds of voltage starvation better or the different bios version increases the voltage faster to support the memory at the high clock speeds.
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iz čega ti isčitaš da je max OC memorije +100.